(BUSINESS WIRE)-- Toshiba Corporation (TOKYO:6502) today announced that it has started construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D center, the Memory R&D Center, at Yokkaichi Operations in Mie prefecture, Japan, the company’s main memory production base.
Fab 6 will be dedicated to production of BiCS FLASH™, Toshiba’s innovative 3D Flash memory1. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimized against market trends, with completion of Phase 1 scheduled for summer 2018. Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.
Toshiba will also construct a Memory R&D Center adjacent to the new fab, with completion targeting December 2017. The facility will advance development of BiCS FLASH™ and new memories.
Toshiba is determined to enhance its competitiveness in the memory business by timely expansion of BiCS FLASH™ production in line with market trends, and to retain leadership in innovation in the memory business.
* BiCS FLASH is a trademark of Toshiba Corporation
1 A structure that stacks Flash memory cells on a silicon substrate. It realizes significant density improvements over planar NAND Flash memory, where cells are formed on the substrate.
Founded in Tokyo in 1875, Toshiba Corporation is a Fortune Global 500 company that contributes to a better world and better lives with innovative technologies in Energy, Infrastructure and Storage. Guided by the philosophy of “Committed to People, Committed to the Future,” Toshiba promotes operations through a global network of 551 consolidated companies employing 188,000 people, with annual sales surpassing 5.6 trillion yen (US$50 billion; March 31, 2016).
Find out more about Toshiba at www.toshiba.co.jp/index.htm
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